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| Semiconductor STK830P Advanced Power MOSFET SWITCHING REGULATOR APPLICATIONS Features * * * * High Voltage: BVDSS=500V(Min.) Low Crss : Crss=8.4pF(Typ.) Low gate charge : Qg=17nC(Typ.) Low RDS(on) :RDS(on)=1.5(Max.) Ordering Information Type NO. STK830P Marking STK830 Package Code TO-220AB-3L Outline Dimensions 3.90 Max. 9.80~10.20 1.17~1.37 unit : mm 14.90~15.30 12.16~12.36 28.50~29.10 13.50~13.90 3.14 Typ. 1.17 Min. 0.88 Max. 8.50~8.90 2.54 Typ. 1 2 3 2.54 Typ. 0.43 Max. 4.50~4.70 KSD-T0P009-000 2.87 Max. PIN Connections 1. Gate 2. Drain 3. Source 1 STK830P Absolute maximum ratings Characteristic Drain-source voltage Gate-source voltage Drain current (DC) Drain current (Pulsed) * (Tc=25C) Symbol VDSS VGSS ID TC=25 TC=100 IDM PD IAS EAS IAR EAR TJ Tstg Rating 500 30 4.5 2.7 18 71 4.5 250 4.5 5.0 150 -55~150 Unit V V A A A W A mJ A mJ C C Drain power dissipation Avalanche current (Single) Single pulsed avalanche energy Avalanche current (Repetitive) Repetitive avalanche energy Junction temperature Storage temperature range * Limited by maximum junction temperature Characteristic Thermal resistance Junction-case Junction-ambient Symbol Rth(J-C) Rth(J-A) Typ. - Max 1.75 62.5 Unit /W KSD-T0P009-000 2 STK830P Electrical Characteristics Characteristic Drain-source breakdown voltage Gate threshold voltage Drain-source cut-off current Gate leakage current Drain-source on-resistance Forward transfer conductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge (Tc=25C) Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Test Condition ID=250 , VGS=0V ID=250 , VGS=5V VDS=500V, VGS=0V VDS=0V, VGS=30V VGS=10V, ID=2.25A VDS=10V, ID=2.25A VGS=0V, VDS=25V f=1 MHz Min. Typ. Max. 500 2.0 3.3 550 46 8.4 12 46 50 48 17 2.6 5.8 4.0 10 100 1.5 830 70 15 26 4.0 9.0 Unit V V S VDD=250V, ID=4.5A RG=12 - VDS=250V, VGS=10V ID=4.5A - - nC Source-Drain Diode Ratings and Characteristics Characteristic Source current (DC) Source current (Pulsed) Forward voltage Reverse recovery time Reverse recovery charge (Tc=25C) Symbol IS ISP VSD trr Qrr Test Condition Integral reverse diode in the MOSFET VGS=0V, IS=4.5A IS=4.5A, VGS=0V dIS/dt=100A/ Min - Typ 188 2.1 Max 4.5 18 1.4 - Unit A V C Note ; Repetitive rating : Pulse width limited by maximum junction temperature L=20mH, IAS=4.5A, VDD=50V, RG=27 Pulse Test : Pulse width 400 , Duty cycle 2% Essentially independent of operating temperature KSD-T0P009-000 3 STK830P Electrical Characteristic Curves Fig. 1 ID - VDS Fig. 2 ID - VGS 1 Fig. 3 RDS(on) - ID Fig. 4 IS - VSD Fig. 5 Capacitance - VDS Fig. 6 VGS - QG KSD-T0P009-000 4 STK830P Fig. 7 V(BR)DSS - TJ Fig. 8 RDS(on) - TJ C C Fig. 9 ID - TC Fig. 10 Safe Operating Area * KSD-T0P009-000 5 STK830P Fig. 11 Gate Charge Test Circuit & Waveform Fig. 12 Switching Time Test Circuit & Waveform Fig. 13 EAS Test Circuit & Waveform KSD-T0P009-000 6 STK830P Fig. 14 Peak Diode Recovery dv/dt Test Circuit & Waveform rr KSD-T0P009-000 7 STK830P The AUK Corp. products are intended for the use as components in general electronic equipment (Office and communication equipment, measuring equipment, home appliance, etc.). Please make sure that you consult with us before you use these AUK Corp. products in equipments which require high quality and / or reliability, and in equipments which could have major impact to the welfare of human life(atomic energy control, airplane, spaceship, transportation, combustion control, all types of safety device, etc.). AUK Corp. cannot accept liability to any damage which may occur in case these AUK Corp. products were used in the mentioned equipments without prior consultation with AUK Corp.. Specifications mentioned in this publication are subject to change without notice. KSD-T0P009-000 8 |
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